发明名称 |
Batch-Type Remote Plasma Processing Apparatus |
摘要 |
A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
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申请公布号 |
US2013104804(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201213674761 |
申请日期 |
2012.11.12 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC.;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TOYODA KAZUYUKI;INOKUCHI YASUHIRO;TAKEBAYASHI MOTONARI;KONTANI TADASHI;ISHIMARU NOBUO |
分类号 |
H01L21/77;C23C16/44;C23C16/452;C23C16/455;C23C16/458;H01J37/32;H01L21/316 |
主分类号 |
H01L21/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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