Verfahren zur Herstellung von Halbleitermaterial grosser Reinheit,申请号DE1958I015855-传众专利搜索

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发明名称	Verfahren zur Herstellung von Halbleitermaterial grosser Reinheit
摘要
申请公布号	DE1198321(B)	申请公布日期	1965.08.12
申请号	DE1958I015855	申请日期	1958.12.31
申请人	INTERNATIONAL STANDARD ELECTRIC CORPORATION	发明人	STERLING HENLEY FRANK;RAYMOND FREDERICK JOHN
分类号	C01B33/029	主分类号	C01B33/029
代理机构		代理人
主权项
地址

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