发明名称 High-voltage vertical FET and method of manufacturing the same
摘要 <p>A transistor fabricated on a semiconductor die is arranged into sections of elongated transistor segments. The sections are arranged in rows and columns substantially across the semiconductor die. Adjacent sections in a row or a column are oriented such that the length of the transistor segments in a first one of the adjacent sections extends in a first direction, and the length of the transistor segments in a second one of the adjacent sections extends in a second direction, the first direction being substantially orthogonal to the second direction.</p>
申请公布号 EP2587545(A1) 申请公布日期 2013.05.01
申请号 EP20130152055 申请日期 2007.11.28
申请人 POWER INTEGRATIONS, INC. 发明人 PARTHASARATHY, VIJAY
分类号 H01L29/78;H01L21/77;H01L29/06;H01L29/40;H01L29/423 主分类号 H01L29/78
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