| 摘要 |
Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode. |
