发明名称 |
TANTALUM SPUTTERING TARGET |
摘要 |
Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity). |
申请公布号 |
EP2418299(A4) |
申请公布日期 |
2013.05.01 |
申请号 |
EP20100777652 |
申请日期 |
2010.04.23 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
FUKUSHIMA ATSUSHI;ODA KUNIHIRO |
分类号 |
C23C14/34;C22C27/02;C22F1/00;C22F1/18;H01L21/28;H01L21/285 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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