发明名称 |
SILICON CARBIDE SUBSTRATE AND METHOD FOR PRODUCTION THEREOF |
摘要 |
<p>A SiC substrate includes a first orientation flat (12) parallel to the <11-20> direction, and a second orientation flat (13) being in a direction intersecting the first orientation flat (12) and being different from the first orientation flat (12) in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the <11-20> direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends.</p> |
申请公布号 |
EP2400527(A4) |
申请公布日期 |
2013.05.01 |
申请号 |
EP20100743665 |
申请日期 |
2010.02.09 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI, MAKOTO;MASUDA, TAKEYOSHI |
分类号 |
C30B29/36;H01L21/02;H01L23/544 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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