发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device (1) includes a substrate (2) made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer (4) serving as a semiconductor layer, and an oxide film (8) serving as an insulating film. The p-type layer (4) is formed on the substrate (2) and is made of silicon carbide. The oxide film (8) is formed to contact with a surface of the p-type layer (4). A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film (8)) is greater than or equal to 1×10 21 cm -3 . |
申请公布号 |
EP2357671(A4) |
申请公布日期 |
2013.05.01 |
申请号 |
EP20090827391 |
申请日期 |
2009.02.03 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA, SHIN;MASUDA, TAKEYOSHI;WADA, KEIJI;TSUMORI, MASATO |
分类号 |
H01L29/78;H01L21/316;H01L21/336;H01L29/12 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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