发明名称 |
Method and system for transient voltage suppressors |
摘要 |
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly (218) and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die (302) in a mesa structure that includes a first layer (306) of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer (308) of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer (312) of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity. |
申请公布号 |
EP2587543(A2) |
申请公布日期 |
2013.05.01 |
申请号 |
EP20120189922 |
申请日期 |
2012.10.25 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KASHYAP, AVINASH SRIKRISHNAN;SHADDOCK, DAVID MULFORD;ANDARAWIS, EMAD;SANDVIK, PETER MICAH;ARTHUR, STEPHEN DALEY |
分类号 |
H01L29/861;H01L29/06;H01L29/16 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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