| 摘要 |
<p>Synthetic single crystal CVD diamond comprising a doped layer and an adjacent undoped layer wherein an interface between the doped and undoped layer is substantially free of impurities, the dopant concentration varies by at least a factor of 10 over a thickness of no more than 0.3 um across the interface between the doped and undoped layers and wherein the doped layer has a thickness of at least 1 micron.</p> |
