发明名称 METHOD FOR PREPARING CARBON NANOSTRUCTURE
摘要 <p>A method of producing a carbon nanostructure is provided which can increase evenness of a shape and a purity of the carbon nanostructure and can reduce a production cost. In a method of producing a carbon nanostructure, a carbon crystal is grown by vapor phase epitaxy from a crystal growth surface of a catalyst base (17) including a catalyst material (11), and the catalyst base (17) is formed by diameter-reduction processing. The catalyst base (17) is preferably formed as an aggregate including an arrangement of a plurality of catalyst structures each formed with a non-catalyst material (12), a material not having a substantial catalytic function for growth of the carbon crystal, formed on at least a portion of a side surface of the catalyst material (11) of a columnar shape having the crystal growth surface as a top surface. In addition, a non-catalyst material (15) is preferably formed on at least a portion of a side surface of the aggregate, and the catalyst structures preferably have variations of at most CV 10% in surface areas of the catalyst material (11) on the crystal growth surface.</p>
申请公布号 EP1757558(A4) 申请公布日期 2013.05.01
申请号 EP20050741435 申请日期 2005.05.19
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HIKATA, TAKESHI
分类号 B01J35/02;C01B31/02;B01J23/745;B82Y30/00;B82Y40/00 主分类号 B01J35/02
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