| 摘要 |
<p>The present invention relates to a method of forming nanostructures, comprising providing a conductive substrate; depositing a stack of layers on the conductive substrate; and growing nanostructures on the stack of layers. The stack of layers comprises at least one intermediate layer and a catalyst layer formed on the at least one intermediate layer. The at least one intermediate layer is made of a material that is different from a material of the conductive substrate and a material of the catalyst layer; and the stack of layers comprises materials permitting interdiffusion of the layers between the conducting substrate and the nanostructures.</p> |
