发明名称 |
Layout and process of forming contact plugs |
摘要 |
A device includes a semiconductor substrate including an active region, a gate electrode directly over the active region, and a gate contact plug over and electrically coupled to the gate electrode. The gate contact plug includes at least a portion directly over, and vertically overlapping, the active region. |
申请公布号 |
US8431985(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US20100852274 |
申请日期 |
2010.08.06 |
申请人 |
HOU YUNG-CHIN;LU LEE-CHUNG;LIN SHYUE-SHYH;TIEN LI-CHUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HOU YUNG-CHIN;LU LEE-CHUNG;LIN SHYUE-SHYH;TIEN LI-CHUN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|