发明名称 Layout and process of forming contact plugs
摘要 A device includes a semiconductor substrate including an active region, a gate electrode directly over the active region, and a gate contact plug over and electrically coupled to the gate electrode. The gate contact plug includes at least a portion directly over, and vertically overlapping, the active region.
申请公布号 US8431985(B2) 申请公布日期 2013.04.30
申请号 US20100852274 申请日期 2010.08.06
申请人 HOU YUNG-CHIN;LU LEE-CHUNG;LIN SHYUE-SHYH;TIEN LI-CHUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HOU YUNG-CHIN;LU LEE-CHUNG;LIN SHYUE-SHYH;TIEN LI-CHUN
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
主权项
地址