发明名称 |
Methods of manufacturing semiconductor devices |
摘要 |
A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively. |
申请公布号 |
US8431462(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201113183630 |
申请日期 |
2011.07.15 |
申请人 |
LEE KWAN-HEUM;JUNG SOON-WOOK;PARK JUNG-HYUN;KIM WOOK-JE;BAN JONG-SANG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KWAN-HEUM;JUNG SOON-WOOK;PARK JUNG-HYUN;KIM WOOK-JE;BAN JONG-SANG |
分类号 |
H01L21/337;H01L21/336;H01L21/8238;H01L27/12 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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