发明名称 |
Organic transistor element, and method of manufacturing the same by concurrently doping an organic semiconductor layer and wet etching an electrode provided on the organic semiconductor layer |
摘要 |
In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant. |
申请公布号 |
US8431448(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US20070448563 |
申请日期 |
2007.12.28 |
申请人 |
OBATA KATSUNARI;HATA TAKUYA;NAKAMURA KENJI;ENDOH HIROYUKI;DAI NIPPON PRINTING CO., LTD. |
发明人 |
OBATA KATSUNARI;HATA TAKUYA;NAKAMURA KENJI;ENDOH HIROYUKI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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