发明名称 Organic transistor element, and method of manufacturing the same by concurrently doping an organic semiconductor layer and wet etching an electrode provided on the organic semiconductor layer
摘要 In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant.
申请公布号 US8431448(B2) 申请公布日期 2013.04.30
申请号 US20070448563 申请日期 2007.12.28
申请人 OBATA KATSUNARI;HATA TAKUYA;NAKAMURA KENJI;ENDOH HIROYUKI;DAI NIPPON PRINTING CO., LTD. 发明人 OBATA KATSUNARI;HATA TAKUYA;NAKAMURA KENJI;ENDOH HIROYUKI
分类号 H01L21/00 主分类号 H01L21/00
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