Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure

摘要

The embodiments of methods and structures disclosed herein provide mechanisms of performing doping an inter-level dielectric film, ILD0, surrounding the gate structures with a dopant to reduce its etch rates during the processes of removing dummy gate electrode layer and/or gate dielectric layer for replacement gate technologies. The ILD0 film may be doped with a plasma doping process (PLAD) or an ion beam process. Post doping anneal is optional.