发明名称 |
Method for membrane protection during reactive ion/plasma etching processing for via or cavity formation in semiconductor manufacture |
摘要 |
A method for protecting a chuck membrane in a reactive ion etcher during plasma processing is described. The method utilizes a photoresist as a protective layer. Suitable photoresists can be used in this invention to not only image a semiconductor substrate to protect areas where vias and/or cavities are not desired during plasma processing but also to protect the chuck membrane(s) of the reactive ion etcher from being damaged and/or contaminated during plasma processing. Both negative-working and positive-working photoresists can be used. |
申请公布号 |
US8431491(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US20090609353 |
申请日期 |
2009.10.30 |
申请人 |
BALUT CHESTER E.;SCHADT, III FRANK LEONARD;VARGO STEPHEN E.;E. I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
BALUT CHESTER E.;SCHADT, III FRANK LEONARD;VARGO STEPHEN E. |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|