发明名称 |
IC device having low resistance TSV comprising ground connection |
摘要 |
A method of forming a semiconductor device includes an integrated circuit (IC) die which is provided with a substrate with surfaces. At least one through substrate via (TSV) is formed through the substrate to a protruding integral tip that includes sidewalls and a distal end. A metal layer is formed on the bottom surface of the IC die, and the sidewalls and the distal end of the protruding integral tips. Completing fabrication of at least one functional circuit including at least one ground pad on the top surface of the semiconductor, wherein the ground pad is coupled to said TSV.
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申请公布号 |
US8431481(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201213444545 |
申请日期 |
2012.04.11 |
申请人 |
DUNNE RAJIV;MORRISON GARY P.;CHAUHAN SATYENDRA S.;MURTUZA MASOOD;BONIFIELD THOMAS D.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DUNNE RAJIV;MORRISON GARY P.;CHAUHAN SATYENDRA S.;MURTUZA MASOOD;BONIFIELD THOMAS D. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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