发明名称 |
Interconnect structure for improved time dependent dielectric breakdown |
摘要 |
The present disclosure provides a method of forming an interconnect to an electrical device. In one embodiment, the method of forming an interconnect includes providing a device layer on a substrate, wherein the device layer comprises at least one electrical device, an intralevel dielectric over the at least one electrical device, and a contact that is in electrical communication with the at least one electrical device. An interconnect metal layer is formed on the device layer, and a tantalum-containing etch mask is formed on a portion of the interconnect metal layer. The interconnect metal layer is etched to provide a trapezoid shaped interconnect in communication with the at least one electrical device. The trapezoid shaped interconnect has a first surface that is in contact with the device layer with a greater width than a second surface of the trapezoid shaped interconnect that is in contact with the tantalum-containing etch mask.
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申请公布号 |
US8431486(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US20100853537 |
申请日期 |
2010.08.10 |
申请人 |
CABRAL, JR. CYRIL;ENGELMANN SEBASTIAN U.;FLETCHER BENJAMIN;JOSEPH ERIC A.;NITTA SATYANARAYANA V.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, JR. CYRIL;ENGELMANN SEBASTIAN U.;FLETCHER BENJAMIN;JOSEPH ERIC A.;NITTA SATYANARAYANA V. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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