发明名称 |
Back-side illumination image sensor |
摘要 |
A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the transfer transistor. |
申请公布号 |
US8431975(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201113018365 |
申请日期 |
2011.01.31 |
申请人 |
HSIUNG CHIH-WEI;HUANG FANG-MING;CHANG CHUNG-WEI;HIMAX IMAGING, INC. |
发明人 |
HSIUNG CHIH-WEI;HUANG FANG-MING;CHANG CHUNG-WEI |
分类号 |
H01L31/101;H01L31/113 |
主分类号 |
H01L31/101 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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