| 摘要 |
<p>INTEGRATED CIRCUIT SYSTEM WITH DOUBLE DOPED DRAIN TRANSISTORAn integrated circuit system . eludes a substrate, forming a gate over the substrate, forming a first drift region having a first counter diffused region and a source diffused region, the first drift region in the substrate adjacent a first side of the gate, and forming a second drift region having a second counter diffused region and a drain diffused region, the second drift region in the substrate adjacent a second side of the gate opposite the first side of the gate. Figure 1</p> |
