发明名称 METHODS OF FORMING THROUGH WAFER INTERCONNECTS IN SEMICONDUCTOR STRUCTURES USING SACRIFICIAL MATERIAL, AND SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS
摘要 <p>Methods of fabricating semiconductor structures include providing a sacrificial (132) material within a via recess (112), forming a first portion (174) of a through wafer interconnect in the semiconductor structure, and replacing the sacrificial material with conductive material to form a second portion (212) of the through wafer interconnect. Semiconductor structures are formed by such methods. For example, a semiconductor structure may include a sacrificial material within a via recess, and a first portion of a through wafer interconnect that is aligned with the via recess. Semiconductor structures include through wafer interconnects comprising two or more portions having a boundary therebetween.</p>
申请公布号 SG188195(A1) 申请公布日期 2013.04.30
申请号 SG20130008750 申请日期 2011.09.12
申请人 SOITEC 发明人 SADAKA, MARIAM
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