发明名称 |
Non-volatile memory device and method of fabricating the same |
摘要 |
A non-volatile memory device and a method of fabricating the same are provided. The method can include disposing an isolation layer on a semiconductor substrate. The isolation layer may protrude from the main surface of the semiconductor substrate and define an active region. In a recess defined by the protrusion of the isolation layer and the active region, a diffusion-retarding poly pattern and a floating gate may be formed in sequence. A control gate may be disposed on the isolation layer to cover the diffusion-retarding poly pattern and the floating gate. |
申请公布号 |
US8431983(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US20090650367 |
申请日期 |
2009.12.30 |
申请人 |
LEE WOONG;KO JUNG-YOON;LEE SANG-KYOUNG;SON HO-MIN;JANG WON-JUN;JEE JUNG-GEUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WOONG;KO JUNG-YOON;LEE SANG-KYOUNG;SON HO-MIN;JANG WON-JUN;JEE JUNG-GEUN |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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