发明名称 |
Dopant diffusion modulation in GaN buffer layers |
摘要 |
An enhancement mode gallium nitride (GaN) transistor with a Mg doped layer and a Mg growth interruption (diffusion barrier) layer to trap excess or residual Mg dopant. The Mg growth interruption (diffusion barrier) layer is formed by growing GaN, stopping the supply of gallium while maintaining a supply of ammonia or other nitrogen containing source to form a layer of magnesium nitride (MgN), and then resuming the flow of gallium to form a GaN layer to seal in the layer of MgN. |
申请公布号 |
US8431960(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US20100756063 |
申请日期 |
2010.04.07 |
申请人 |
BEACH ROBERT;ZHAO GUANG YUAN;EFFICIENT POWER CONVERSION CORPORATION |
发明人 |
BEACH ROBERT;ZHAO GUANG YUAN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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