| 发明名称 |
CoFeSiB/Pt multilayers exhibiting perpendicular magnetic anisotropy |
| 摘要 |
Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
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| 申请公布号 |
US8431256(B2) |
申请公布日期 |
2013.04.30 |
| 申请号 |
US20070746900 |
申请日期 |
2007.05.10 |
| 申请人 |
KIM YOUNG KEUN;KIM YOU-SONG;CHUN BYONG-SUN;HAN SEUNG-YOUB;RHEE JANG-ROH;KOREA UNIVERSITY FOUNDATION |
发明人 |
KIM YOUNG KEUN;KIM YOU-SONG;CHUN BYONG-SUN;HAN SEUNG-YOUB;RHEE JANG-ROH |
| 分类号 |
G11B5/66 |
主分类号 |
G11B5/66 |
| 代理机构 |
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