Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor

摘要

A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the concentration of Hf is from about 9 to about 15 at % based on 100 at % of the total concentration of Hf, In, and Zn; and source and drain regions respectively formed to extend on both sides of the oxide semiconductor layer and the gate insulating layer.