发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a substrate having a trench that defines an active region, an isolation layer that buries the trench, a pro-oxidant region formed at an upper corner portion of the trench to enhance oxidation at the upper corner portion of the trench when a gate insulation layer is grown on the active region, and a gate conductive layer formed on the gate insulation layer. |
申请公布号 |
US8431465(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201113331536 |
申请日期 |
2011.12.20 |
申请人 |
YAMAMOTO HIROSHI;YOSHIKAWA MITSURU;MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
YAMAMOTO HIROSHI;YOSHIKAWA MITSURU |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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