发明名称 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
摘要 There is provided a method for continual preparation of granular polycrystalline silicon using a fluidized bed reactor, enabling a stable, long-term operation of the reactor by effective removal of silicon deposit accumulated on the inner wall of the reactor tube. The method comprises (i) a silicon particle preparation step, wherein silicon deposition occurs on the surface of the silicon particles, while silicon deposit is accumulated on the inner wall of the reactor tube encompassing the reaction zone; (ii) a silicon particle partial discharging step, wherein a part of the silicon particles remaining inside the reactor tube is discharged out of the fluidized bed reactor so that the height of the bed of the silicon particles does not exceed the height of the reaction gas outlet; and (iii) a silicon deposit removal step, wherein the silicon deposit is removed by supplying an etching gas into the reaction zone.
申请公布号 US8431032(B2) 申请公布日期 2013.04.30
申请号 US20090609330 申请日期 2009.10.30
申请人 KIM HEE YOUNG;YOON KYUNG KOO;PARK YONG KI;CHOI WON CHOON;KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY 发明人 KIM HEE YOUNG;YOON KYUNG KOO;PARK YONG KI;CHOI WON CHOON
分类号 B44C1/22 主分类号 B44C1/22
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