发明名称 |
Nonvolatile memory device and nonvolatile memory system employing same |
摘要 |
A nonvolatile memory device comprises a memory cell array, a row selection circuit and a voltage generator. The memory cell array comprises a first dummy memory cell, a second dummy memory cell, and a NAND string comprising a plurality of memory cells coupled in series between a string selection transistor and a ground selection transistor through the first dummy memory cell and the second dummy memory cell. During a read-out operation mode, a dummy read-out voltage is applied to a first dummy wordline coupled to the first dummy memory cell, and to a second dummy wordline coupled to the second dummy memory cell. The dummy read-out voltage has a lower magnitude than a read-out voltage applied to an unselected memory cell during the read-out operation mode. |
申请公布号 |
US8432741(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201213419732 |
申请日期 |
2012.03.14 |
申请人 |
LEE SEUNG-JAE;BYEON DAE-SEOK;HA HYUN-CHUL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEUNG-JAE;BYEON DAE-SEOK;HA HYUN-CHUL |
分类号 |
G11C11/34;G11C16/04;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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