VOLTAGE GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS

摘要

PURPOSE: A voltage generating circuit of a semiconductor memory device is provided to reduce current consumption in the semiconductor memory device by decreasing a leakage current of a transistor. CONSTITUTION: A plurality of pumping units(400-600) provide a voltage to an output node. A sensing unit(100) generates a pumping enable signal by sensing a voltage level of the output node. An oscillator(200) generates an oscillator signal in response to the pumping enable signal. A control unit(300) selectively outputs the oscillator signal to the plurality of pumping units in response to an active signal, a power up signal, and a mode register set signal. [Reference numerals] (100) Sensing unit; (200) Oscillator; (300) Control unit; (400) First pumping unit; (500) Second pumping unit; (600) Third pumping unit;