发明名称 |
PHOTOMASK BLANK, PHOTOMASK, AND MAKING METHOD |
摘要 |
Photomask Blank, Photomask, and Making MethodIn a photomask blank comprising a transparent substrate, an optical film of material containing a transition metal and silicon, and a hard mask film, the hardio mask film is a multilayer film including a first layer of a chromium-based material containing 20-60 atom% of oxygen and a second layer of a chromium-based material containing at least 50 atom% of chromium and less than 20 atom % of oxygen. The hard mask film having a thickness of 2.0 nm to less than15 10 nm is resistant to fluorine dry etching.Fig. 2 |
申请公布号 |
SG188719(A1) |
申请公布日期 |
2013.04.30 |
申请号 |
SG20120060125 |
申请日期 |
2012.08.14 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
YUKIO INAZUKI;SHINICHI IGARASHI;KAZUHIRO NISHIKAWA;HIROKI YOSHIKAWA |
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