发明名称 Semiconducting Composition and Sheet for Nuclear Power High Voltage Cable, Semiconducting Sheet for Nuclear Power High Voltage Cables, Nuclear Power High Voltage Cable Having the same, and Method of Manufacturing the Same
摘要 PURPOSE: A semiconducting layer for nuclear power high voltage cable, semiconducting layer sheet for the atomic power high tension cable, atomic power high tension cable including the same and a manufacturing method thereof are provided to remarkably reduce failure possibility of the atomic power high tension cable. CONSTITUTION: A semiconducting layer for nuclear power high voltage cable comprises a base matrix resin which embodies as ethylene vinyl acetate and additive which is added to the ethylene vinyl acetate. A manufacturing method of the semiconducting layer sheet comprises the following steps: mixing ethylene vinyl acetate solution which dissolves the ethylene vinyl acetate in the cyclohexane with the carbon nanotube solution which dispersed the carbon nanotube into the cyclohexane; removing and drying solvent of the precipitate which is formed by solidifying the mixture using the ethanol(540); and manufacturing by milling and compression-molding the dried precipitate(560).
申请公布号 KR101259746(B1) 申请公布日期 2013.04.30
申请号 KR20110004682 申请日期 2011.01.17
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分类号 C08K3/04;C08L31/04;H01B1/24;H01B7/17 主分类号 C08K3/04
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