发明名称 |
Semiconductor device fabrication using gate substitution |
摘要 |
Methods is provided for forming a CMOS device. The method includes providing a substrate and depositing a gate stack on the substrate. The gate stack includes a gate dielectric and a dummy gate including polycrystalline silicon (polySi). The method also includes depositing a dielectric layer on the substrate after depositing the gate stack on the substrate. The method further includes substituting the dummy gate with a metal without first removing the dummy gate.
|
申请公布号 |
US8431472(B2) |
申请公布日期 |
2013.04.30 |
申请号 |
US201113174257 |
申请日期 |
2011.06.30 |
申请人 |
PARK CHANG SEO;GLOBALFOUNDRIES, INC. |
发明人 |
PARK CHANG SEO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|