| 摘要 |
1,012,124. Semi-conductor devices. CLEVITE CORPORATION. April 2, 1962 [May 18, 1961], No. 25951/65. Divided out of 1,012,123. Heading H1K. The subject-matter of this Specification is included in Specification 1,012,123 but the claims are directed to a method of making a device by the steps of forming a plurality of first regions in a semi-conductor layer of one conductivity type and epitaxially growing a layer of opposite conductivity type on the surface of the layer to cover said first regions. Each of said first regions has an uncompensated impurity concentration greater than that of the layer with which its conductivity type corresponds so that voltage breakdown of the junction between the layers occurs preferentially adjacent said first regions. The device may, if desired, be subdivided into elements each including only one of said first regions. |
