METHODS OF MANUFACTUIRNG PHASE CHANGE MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME

摘要

PURPOSE: A method for manufacturing a phase change memory device and a method for manufacturing a semiconductor device are provided to reduce a reset current by forming a fine contact hole below an exposure limit. CONSTITUTION: An ohmic contact layer and a switching device layer are etched with a hard mask pattern. An ohmic contact pattern(130a), a switching device pattern(120a), and a pattern structure are formed. The surface of the pattern structure is selectively oxidized. An insulation layer is filled between the pattern structures. A contact hole is formed by selectively removing the hard mask pattern which is not oxidized.