| 摘要 |
<p>PRECURSORS FOR PHOTOVOLTAIC PASSIVATION5 Deposition methods are disclosed for producing a passivation layer on aphotovoltaic cell. Method includes depositing a passivation layer comprising at least a bi layer further comprising a silicon oxide and a silicon nitride layer. In one aspect, the silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family SiR,Fly or selected from the family SiRxH,10 silane, and combinations thereof, wherein in SiRkly x+y = 4, y # 4 and R may be independently selected from the group consisting of C1-C8 linear alkyl, wherein the ligand may be saturated or unsaturated; C1-C8 branched alkyl, wherein the ligand may be saturated or unsaturated; C1-C8 cyclic alkyl, wherein the ligand may be saturated, unsaturated, or aromatic; and NR*3wherein Ft* can be independently hydrogen; or linear,15 branched, cyclic, saturated, or unsaturated alkyl. Photovoltaic devices containing the passivation layers are also disclosed.FIGURE 1</p> |
