发明名称 |
NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF |
摘要 |
<p>PURPOSE: A nonvolatile memory device and an operating method thereof are provided to improve reliability by reprogramming data of an adjacent sub-block which is affected by an erased sub-block. CONSTITUTION: A sub-block selected among sub-blocks of a memory block is erased(S110). It is verified whether the program states of memory cells in the remaining sub-blocks of the memory block are changed(S120). The remaining sub-blocks including the memory cells with the changed program states according to a verification result are entirely or partially reprogrammed(S140).</p> |
申请公布号 |
KR20130042780(A) |
申请公布日期 |
2013.04.29 |
申请号 |
KR20110106858 |
申请日期 |
2011.10.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK, DONG HUN |
分类号 |
G11C16/34;G11C16/10 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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