发明名称 NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 <p>PURPOSE: A nonvolatile memory device and an operating method thereof are provided to improve reliability by reprogramming data of an adjacent sub-block which is affected by an erased sub-block. CONSTITUTION: A sub-block selected among sub-blocks of a memory block is erased(S110). It is verified whether the program states of memory cells in the remaining sub-blocks of the memory block are changed(S120). The remaining sub-blocks including the memory cells with the changed program states according to a verification result are entirely or partially reprogrammed(S140).</p>
申请公布号 KR20130042780(A) 申请公布日期 2013.04.29
申请号 KR20110106858 申请日期 2011.10.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWAK, DONG HUN
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
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