SEMICONDUCTOR DEVICES INCLUDING A VERTICAL CHANNEL TRANSISTOR AND METHODS OF FABRICATING THE SAME
摘要
<p>PURPOSE: A semiconductor device including a vertical channel transistor and a method for fabricating the same are provided to prevent floating by connecting channel regions using a string body connection part. CONSTITUTION: A first insulating layer(DL1) is arranged on a substrate. A buried bitline(BBL) is arranged on the first insulating layer. Active pillars(AP) include a channel region. A contact gate electrode is extended adjacently to the channel region. A string body connection part connects the channel regions.</p>
