| 摘要 |
PURPOSE: A horizontal pin diode and a manufacturing method thereof are provided to diversify a device property by variously controlling the width of an intrinsic semiconductor pattern through a layout. CONSTITUTION: An intrinsic semiconductor pattern(210) is made of pure semiconductor materials. A first conductive semiconductor pattern(220) is formed on one side of the intrinsic semiconductor pattern. A second conductive semiconductor pattern(230) is formed on the other side of the intrinsic semiconductor pattern. The intrinsic semiconductor pattern, the first conductive semiconductor pattern, and the second conductive semiconductor pattern are formed on the same horizontal plane. An insulation layer(250) is formed on each part of the upper side and the lower side of a device composed of the intrinsic semiconductor pattern, the first conductive semiconductor pattern, and the second conductive semiconductor pattern. |
