HIGH ELECTRON MOBILITY TRANSISTOR HAVING REDUCED THRESHOLD VOLTAGE VARIATION AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A high electron mobility transistor and a manufacturing method thereof are provided to minimize the change of a gate threshold voltage by accurately controlling the thickness of a material layer. CONSTITUTION: A channel layer(34) includes a 2DEG channel and a depletion region. A first channel supply layer(36) is formed on the channel layer. A depletion layer(40) is formed in a part of the first channel supply layer and the depletion region. The depletion region is formed between a source electrode and a drain electrode to face each other. A gate(44) is formed on the depletion layer.