PLASMA ETCHING APPARATUS

摘要

PURPOSE: A plasma etching apparatus is provided to improve plasma uniformity by using an upper electrode as segment electrodes. CONSTITUTION: A chamber has a space for generating plasma. An upper electrode(20) faces a lower electrode(30) in the chamber. A first RF generator(40) supplies a first radio frequency power to the upper electrode. A second radio frequency generator(50) supplies a second radio frequency power to the lower electrode. Segment electrodes have a continuous conductivity gradient. [Reference numerals] (AA) Plasma;