METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the fault of an insulating layer by performing a second thermal process for annealing. CONSTITUTION: A device isolation region(11) is formed in a semiconductor substrate. Each device isolation region has different width. An insulating layer(110) is formed in the device isolation region. A thermal oxide layer(106) is formed between the insulating layer and the semiconductor substrate. A device formation region(12) is arranged in the semiconductor substrate.