PROGRAMMING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for programming a nonvolatile memory device is provided to minimize a program disturbance phenomenon by finally programming a memory cell which is close to a drain selection transistor. CONSTITUTION: Data is erased in all memory cells included in an array(S30). A preset voltage for a program is applied to a source selection line, a drain selection line, and a bit line(S31). A program voltage is successively applied to word lines from a source selection transistor(S32). The program voltage is applied to the word line to which the program voltage is not applied(S33). [Reference numerals] (AA) Start; (BB) End; (S30) Erasure; (S31) Applying a preset voltage to an SSL, a DSL, and a BL; (S32) Successively applying a program voltage to WL1 to WL63; (S33) Applying the program voltage to a WL0;