METHOD FOR MENUFACTURE THE SEMICONDUCTOR DEVICES FOR ESTIMATING GATE OXIDE INTEGRITY

摘要

PURPOSE: A method for manufacturing a semiconductor device for estimating GOI is provided to accurately form the pattern of the semiconductor device by reducing the lift-off of a photoresist layer. CONSTITUTION: A gate oxide layer is formed on a substrate(100). A gate poly silicon layer(300) is formed on the gate oxide layer(200). An insulating layer(400) is formed on the gate poly silicon layer. A photoresist layer(500) having a pattern is formed on the insulating layer. The gate poly silicon layer and the insulating layer are etched.