发明名称 Manufacturing method of semiconductor device, and IC card, IC tag, RFID, transponder, bill, securities, passport, electronic apparatus, bag, and garment
摘要 The present invention provides a manufacturing method of a semiconductor device used as an ID chip, by which data can be written with improved throughput. According to the manufacturing method of a semiconductor device having a modulation circuit, a demodulation circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate, the memory circuit is a nonvolatile memory circuit of which data is written in the manufacture of the semiconductor device, and elements in a data portion are formed by electron beam exposure or laser exposure while the other portions are formed by mirror projection exposure, step and repeat exposure, or step and scan exposure.
申请公布号 KR101258671(B1) 申请公布日期 2013.04.26
申请号 KR20067018171 申请日期 2005.02.15
申请人 发明人
分类号 G03F7/20;G06K19/07;G06K19/077;G06K19/10;H01L21/027;H01L21/77;H01L21/8229;H01L21/8246;H01L21/84;H01L23/522;H01L27/10;H01L27/112;H01L27/12;H01L27/13;H01L29/786 主分类号 G03F7/20
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