发明名称 Compact Sense Amplifier for Non-Volatile Memory Suitable for Quick Pass Write
摘要 A compact and versatile sense amp is presented. Among its other features this sense amp arrangement provides a way to pre-charge bit lines while doing data scanning. Another feature is that the sense amp circuit can provide a way to set three different bit line levels used in the quick pass write (QPW) technique using dynamic latch, where quick pass write is a technique where cells along a given word line selected for programming can be enabled, inhibited, or partially inhibited for programming. Also, it can provide a convenient way to measure the cell current.
申请公布号 US2013100740(A1) 申请公布日期 2013.04.25
申请号 US201113277966 申请日期 2011.10.20
申请人 SHE MIN;LI YAN;KIM KWANG-HO;CHAN SIU LUNG 发明人 SHE MIN;LI YAN;KIM KWANG-HO;CHAN SIU LUNG
分类号 G11C16/10 主分类号 G11C16/10
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