| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which elution of metal from a metal-containing film can be suppressed in a multilayer resist process using a metal-containing film. <P>SOLUTION: The pattern forming method includes steps of: (1) forming a metal-containing film on an upper side of a substrate to be processed; (2) forming a protective film on the metal-containing film; (3) forming a resist film on the protective film by using a resist composition; (4) exposing the resist film by irradiation with exposure light through a photomask; (5) forming a resist pattern by developing the exposed resist film; and (6) patterning the substrate to be processed by etching using the resist pattern as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
