| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device which achieves rapid rising of a current at the time of turning-on and which is capable of monolithically constituting an inverter with an n-type HEMT without requiring a complicated process. <P>SOLUTION: A p-type GaN transistor comprises: a hole supply layer 22a of a first polarity; a hole transit layer 22b of a second polarity formed on the hole supply layer 22a and having a recess 22ba; and a gate electrode 29 formed above the hole transit layer 22b and in the recess 22ba. <P>COPYRIGHT: (C)2013,JPO&INPIT |
