| 发明名称 |
SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N |
| 摘要 |
An (AlInGaN) based semiconductor device, including one or more (In,Al)GaN layers overlying a semi-polar or non-polar III-nitride substrate or buffer layer, wherein the substrate or buffer employs patterning to influence or control extended defect morphology in layers deposited on the substrate; and one or more (AlInGaN) device layers above and/or below the (In,Al)GaN layers. |
| 申请公布号 |
US2013099202(A1) |
申请公布日期 |
2013.04.25 |
| 申请号 |
US201213659125 |
申请日期 |
2012.10.24 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
HARDY MATTHEW T.;NAKAMURA SHUJI;DENBAARS STEVEN P.;SPECK JAMES STEPHEN |
| 分类号 |
H01L29/15;H01L21/20 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
