发明名称 |
NON-VOLATILE MEMORY CELL COMPRISING METAL OXIDE RESISTIVE MEMORY ELEMENT AND AN ANTIFUSE LAYER |
摘要 |
<p>A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.</p> |
申请公布号 |
WO2013058853(A1) |
申请公布日期 |
2013.04.25 |
申请号 |
WO2012US48232 |
申请日期 |
2012.07.26 |
申请人 |
SANDISK 3D LLC;HOU, KUN;CHEN, YUNG-TIN;LAN, ZHIDA;XU, HUIWEN |
发明人 |
HOU, KUN;CHEN, YUNG-TIN;LAN, ZHIDA;XU, HUIWEN |
分类号 |
G11C17/16;G11C13/00;H01L27/24;H01L45/00 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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