SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE

摘要

[Problem] To provide a method for fabricating a semiconductor device in which, by suppressing the concentration of cavities in Cu wiring, the formation of voids within the Cu wiring is suppressed and the occurrence of stress migration, which refers to faulty wiring such as wire breakage, is suppressed in areas such as the via connecting points in a two-layer wiring system. [Solution] In a method for fabricating a semiconductor device having a Damascene wiring structure, provided is a semiconductor fabrication method in which a thermal cycle step for heating and cooling the processed substrate is performed after the wiring is formed.